Samsung Electronics unveiled its next-generation high-bandwidth memory (HBM) technology and a range of artificial intelligence computing solutions at Nvidia GTC 2026, underscoring its growing collaboration with Nvidia in the rapidly expanding AI infrastructure market. The Korean chipmaker said Tuesday it will showcase its latest semiconductor technologies at the conference held in San Jose, Calif., from Monday to Thursday this week (local time), presenting solutions spanning memory, logic, foundry and advanced packaging aimed at next-generation data centers and AI systems. The centerpiece of the exhibition is Samsung’s sixth-generation HBM4, which has entered mass production and is designed for Nvidia’s upcoming Vera Rubin platform. Samsung said the chip can deliver processing speeds of 11.7 gigabits per second, exceeding the industry’s typical 8 gigabits per second standard, and can be boosted to 13 gigabits per second. The company developed the chip using its sixth-generation 10-nanometer-class DRAM process. Samsung will also showcase HBM4E, the successor to HBM4, for the first t